інтернет-адреса сторінки:
http://jnas.nbuv.gov.ua/article/UJRN-0000350259
Semiconductor physics, quantum electronics & optoelectronics 
А - 2019 /
Випуск (2012, Vol. 15, № 3)
Aleinikov A. B., Berezovets V. A., Borblik V. L., Shwarts M. M., Shwarts Yu. M.
Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown
Cite:
Aleinikov, A. B., Berezovets, V. A., Borblik, V. L., Shwarts, M. M., Shwarts, Yu. M. (2012). Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown. Semiconductor Physics, Quantum Electronics and Optoelectronics , 15 (3), 288-293. http://jnas.nbuv.gov.ua/article/UJRN-0000350259
PDF