інтернет-адреса сторінки:
http://jnas.nbuv.gov.ua/article/UJRN-0000350383
Semiconductor physics, quantum electronics & optoelectronics 
А - 2019 /
Випуск (2012, Vol. 15, № 4)
Kavetskyy T. S., Tsmots V. M., Stepanov A. L.
Radiation/annealing-induced structural changes in GexAs40 xS60 glasses as revealed from high-energy synchrotron X-ray diffraction measurements
Cite:
Kavetskyy, T. S., Tsmots, V. M., Stepanov, A. L. (2012). Radiation/annealing-induced structural changes in GexAs40 xS60 glasses as revealed from high-energy synchrotron X-ray diffraction measurements. Semiconductor Physics, Quantum Electronics and Optoelectronics , 15 (4), 310-320. http://jnas.nbuv.gov.ua/article/UJRN-0000350383
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