ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu1. 8S heterostructure / Semikina T. V., Mamykin S. V., Godlewski M., Luka G., Pietruszka R., Kopalko K., Krajewski T. A., Gieraltowska S., Wachnicki L., Shmyryeva L. N. (2013)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000351876
Semiconductor physics, quantum electronics & optoelectronics    А - 2019 /  Випуск (2013, Vol. 16, № 2)
Semikina T. V., Mamykin S. V., Godlewski M., Luka G., Pietruszka R., Kopalko K., Krajewski T. A., Gieraltowska S., Wachnicki L., Shmyryeva L. N.
ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu1. 8S heterostructure
Cite:
Semikina, T. V., Mamykin, S. V., Godlewski, M., Luka, G., Pietruszka, R., Kopalko, K., Krajewski, T. A., Gieraltowska, S., Wachnicki, L., Shmyryeva, L. N. (2013). ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu1. 8S heterostructure. Semiconductor Physics, Quantum Electronics and Optoelectronics , 16 (2), 111-116. http://jnas.nbuv.gov.ua/article/UJRN-0000351876 | |
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