інтернет-адреса сторінки:
http://jnas.nbuv.gov.ua/article/UJRN-0000352569
Semiconductor physics, quantum electronics & optoelectronics 
А - 2019 /
Випуск (2014, Vol. 17, № 1)
Babentsov V. N., Boyko V. A., Gasan-zade S. G., Shepelskii G. A., Stariy S. V.
Dislocation emission caused by different types of nanoscale deformation defects in CdTe
Cite:
Babentsov, V. N., Boyko, V. A., Gasan-zade, S. G., Shepelskii, G. A., Stariy, S. V. (2014). Dislocation emission caused by different types of nanoscale deformation defects in CdTe. Semiconductor Physics, Quantum Electronics and Optoelectronics , 17 (1), 29-33. http://jnas.nbuv.gov.ua/article/UJRN-0000352569
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