Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios / Kladko V. P., Safriuk N. V., Stanchu H. V., Kuchuk A. V., Melnyk V. P., Oberemok A. S., Kriviy S. B., Maksymenko Z. V., Belyaev A. E. , Yavich B. S. (2014)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000353038
Semiconductor physics, quantum electronics & optoelectronics    А - 2019 /  Випуск (2014, Vol. 17, № 4)
Kladko V. P., Safriuk N. V., Stanchu H. V., Kuchuk A. V., Melnyk V. P., Oberemok A. S., Kriviy S. B., Maksymenko Z. V., Belyaev A. E. , Yavich B. S.
Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios
Cite:
Kladko, V. P., Safriuk, N. V., Stanchu, H. V., Kuchuk, A. V., Melnyk, V. P., Oberemok, A. S., Kriviy, S. B., Maksymenko, Z. V., Belyaev, A. E. , Yavich, B. S. (2014). Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios. Semiconductor Physics, Quantum Electronics and Optoelectronics , 17 (4), 317-324. http://jnas.nbuv.gov.ua/article/UJRN-0000353038 | |
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