Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization / Naumov A. V., Kolomys O. F., Romanyuk A. S., Tsykaniuk B. I., Strelchuk V. V., Trius M. P., Avksentyev A. Yu., Belyaev A. E. (2015)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000714330
Semiconductor physics, quantum electronics & optoelectronics    А - 2019 /  Випуск (2015, Vol. 18, № 4)
Naumov A. V., Kolomys O. F., Romanyuk A. S., Tsykaniuk B. I., Strelchuk V. V., Trius M. P., Avksentyev A. Yu., Belyaev A. E.
Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization
Cite:
Naumov, A. V., Kolomys, O. F., Romanyuk, A. S., Tsykaniuk, B. I., Strelchuk, V. V., Trius, M. P., Avksentyev, A. Yu., Belyaev, A. E. (2015). Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization. Semiconductor Physics, Quantum Electronics and Optoelectronics , 18 (4), 396-402. http://jnas.nbuv.gov.ua/article/UJRN-0000714330 | |
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