інтернет-адреса сторінки:
http://jnas.nbuv.gov.ua/article/UJRN-0000714433
Semiconductor physics, quantum electronics & optoelectronics 
А - 2019 /
Випуск (2016, Vol. 19, № 4)
Ponomaryov S. S., Yukhymchuk V. O., Valakh M. Ya.
Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy
Cite:
Ponomaryov, S. S., Yukhymchuk, V. O., Valakh, M. Ya. (2016). Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy. Semiconductor Physics, Quantum Electronics and Optoelectronics , 19 (4), 321-327. http://jnas.nbuv.gov.ua/article/UJRN-0000714433
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