інтернет-адреса сторінки:
http://jnas.nbuv.gov.ua/article/UJRN-0000714435
Semiconductor physics, quantum electronics & optoelectronics 
А - 2019 /
Випуск (2016, Vol. 19, № 4)
Sachenko A. V., Kostylyov V. P., Vlasiuk V. M., Sokolovskyi I. O., Evstigneev M.
The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. The case of a long Shockley–Read–Hall lifetime
Cite:
Sachenko, A. V., Kostylyov, V. P., Vlasiuk, V. M., Sokolovskyi, I. O., Evstigneev, M. (2016). The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. The case of a long Shockley–Read–Hall lifetime. Semiconductor Physics, Quantum Electronics and Optoelectronics , 19 (4), 334-342. http://jnas.nbuv.gov.ua/article/UJRN-0000714435
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