інтернет-адреса сторінки:
http://jnas.nbuv.gov.ua/article/UJRN-0000778509
Semiconductor physics, quantum electronics & optoelectronics 
А - 2019 /
Випуск (2017, Vol. 20, № 3)
Onyshchenko V. F., Karachevtseva L. A., Lytvynenko O. O., Plakhotnyuk M. M., Stronska O. Y.
Effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids
Cite:
Onyshchenko, V. F., Karachevtseva, L. A., Lytvynenko, O. O., Plakhotnyuk, M. M., Stronska, O. Y. (2017). Effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids. Semiconductor Physics, Quantum Electronics and Optoelectronics , 20 (3), 325-329. http://jnas.nbuv.gov.ua/article/UJRN-0000778509
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