інтернет-адреса сторінки:
http://jnas.nbuv.gov.ua/article/UJRN-0000778510
Semiconductor physics, quantum electronics & optoelectronics 
А - 2019 /
Випуск (2017, Vol. 20, № 3)
Parfenyuk P. V., Evtukh A. A., Korobchuk I. M., Glotov V. I., Strelchuk V. V.
Peculiarities of nanocrystalline silicon films growth on porous anodic alumina surface
Cite:
Parfenyuk, P. V., Evtukh, A. A., Korobchuk, I. M., Glotov, V. I., Strelchuk, V. V. (2017). Peculiarities of nanocrystalline silicon films growth on porous anodic alumina surface. Semiconductor Physics, Quantum Electronics and Optoelectronics , 20 (3), 330-334. http://jnas.nbuv.gov.ua/article/UJRN-0000778510
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