інтернет-адреса сторінки:
http://jnas.nbuv.gov.ua/article/UJRN-0000806885
Semiconductor physics, quantum electronics & optoelectronics 
А - 2019 /
Випуск (2017, Vol. 20, № 4)
Bacherikov Yu. Yu., Konakova R. V., Okhrimenko O. B., Berezovska N. I., Kapitanchuk L. M., Svetlichnyi A. M.
Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures
Cite:
Bacherikov, Yu. Yu., Konakova, R. V., Okhrimenko, O. B., Berezovska, N. I., Kapitanchuk, L. M., Svetlichnyi, A. M. (2017). Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures. Semiconductor Physics, Quantum Electronics and Optoelectronics , 20 (4), 465-469. http://jnas.nbuv.gov.ua/article/UJRN-0000806885
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