Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist / Lytvyn P. M., Malyuta S. V., Indutnyi I. Z., Efremov A. A., Slobodyan O. V., Min'ko V. I., Nazarov A. N., Borysov O. V., Prokopenko I. V. (2018)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000899772
Semiconductor physics, quantum electronics & optoelectronics    А - 2019 /  Випуск (2018, Vol. 21, № 2)
Lytvyn P. M., Malyuta S. V., Indutnyi I. Z., Efremov A. A., Slobodyan O. V., Min'ko V. I., Nazarov A. N., Borysov O. V., Prokopenko I. V.
Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist
Cite:
Lytvyn, P. M., Malyuta, S. V., Indutnyi, I. Z., Efremov, A. A., Slobodyan, O. V., Minko, V. I., Nazarov, A. N., Borysov, O. V., Prokopenko, I. V. (2018). Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist. Semiconductor Physics, Quantum Electronics and Optoelectronics , 21 (2), 152-159. http://jnas.nbuv.gov.ua/article/UJRN-0000899772 | |
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