Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates / Bacherikov Yu. Yu., Dmitruk N. L., Konakova R. V., Kolomys O. F., Okhrimenko O. B., Strelchuk V. V., Lytvyn O. S., Kapitanchuk L. M., Svetlichnyi A. M. (2018)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000899779
Semiconductor physics, quantum electronics & optoelectronics    А - 2019 /  Випуск (2018, Vol. 21, № 2)
Bacherikov Yu. Yu., Dmitruk N. L., Konakova R. V., Kolomys O. F., Okhrimenko O. B., Strelchuk V. V., Lytvyn O. S., Kapitanchuk L. M., Svetlichnyi A. M.
Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates
Cite:
Bacherikov, Yu. Yu., Dmitruk, N. L., Konakova, R. V., Kolomys, O. F., Okhrimenko, O. B., Strelchuk, V. V., Lytvyn, O. S., Kapitanchuk, L. M., Svetlichnyi, A. M. (2018). Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates. Semiconductor Physics, Quantum Electronics and Optoelectronics , 21 (2), 200-205. http://jnas.nbuv.gov.ua/article/UJRN-0000899779 | |
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