Be-ion implanted p-n InSb diode for infrared applications. Modeling, fabrication and characterization / Korotyeyev V. V., Kochelap V. O., Sapon S. V., Romaniuk B. M., Melnik V. P., Dubikovskyi O. V., Sabov T. M. (2018)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000923043
Semiconductor physics, quantum electronics & optoelectronics    А - 2019 /  Випуск (2018, Vol. 21, № 3)
Korotyeyev V. V., Kochelap V. O., Sapon S. V., Romaniuk B. M., Melnik V. P., Dubikovskyi O. V., Sabov T. M.
Be-ion implanted p-n InSb diode for infrared applications. Modeling, fabrication and characterization
Cite:
Korotyeyev, V. V., Kochelap, V. O., Sapon, S. V., Romaniuk, B. M., Melnik, V. P., Dubikovskyi, O. V., Sabov, T. M. (2018). Be-ion implanted p-n InSb diode for infrared applications. Modeling, fabrication and characterization. Semiconductor Physics, Quantum Electronics and Optoelectronics , 21 (3), 294-306. http://jnas.nbuv.gov.ua/article/UJRN-0000923043 | |
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