The effect of ion implantation on structural damage in compositionally graded AlGaN layers / Liubchenko O. I., Kladko V. P., Stanchu H. V., Sabov T. M., Melnik V. P., Kryvyi S. B., Belyaev A. E. (2019)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0001000445
Semiconductor physics, quantum electronics & optoelectronics    А - 2019 /  Випуск (2019, Vol. 22, № 1)
Liubchenko O. I., Kladko V. P., Stanchu H. V., Sabov T. M., Melnik V. P., Kryvyi S. B., Belyaev A. E.
The effect of ion implantation on structural damage in compositionally graded AlGaN layers
Cite:
Liubchenko, O. I., Kladko, V. P., Stanchu, H. V., Sabov, T. M., Melnik, V. P., Kryvyi, S. B., Belyaev, A. E. (2019). The effect of ion implantation on structural damage in compositionally graded AlGaN layers. Semiconductor Physics, Quantum Electronics and Optoelectronics , 22 (1), 119-129. http://jnas.nbuv.gov.ua/article/UJRN-0001000445 | |
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