Photoelectric properties of SiGe films covered with amorphous- and polycrystalline-silicon layers / Shmid V., Podolian A., Nadtochiy A., Korotchenkov O., Romanyuk B., Melnik V., Popov V., Kosulya O. (2019)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0001003922
Ukrainian journal of physics   А - 2018 /  Випуск (2019, Vol. 64, № 5)
Shmid V., Podolian A., Nadtochiy A., Korotchenkov O., Romanyuk B., Melnik V., Popov V., Kosulya O.
Photoelectric properties of SiGe films covered with amorphous- and polycrystalline-silicon layers
Cite:
Shmid, V., Podolian, A., Nadtochiy, A., Korotchenkov, O., Romanyuk, B., Melnik, V., Popov, V., Kosulya, O. (2019). Photoelectric properties of SiGe films covered with amorphous- and polycrystalline-silicon layers. Ukrainian journal of physics, 64 (5), 415-424. http://jnas.nbuv.gov.ua/article/UJRN-0001003922 | |
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