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Efficient SERS substrates based on laterally ordered gold nanostructures made using interference lithography / Hreshchuk O. M., Yukhymchuk V. O., Dzhagan V. M., Danko V. A., Min'ko V. I., Indutnyi I. Z., Shepeliavyi P. Ye., Lytvyn P. M., Sheregii E., Prokhorenko S. (2019) 
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 інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0001073626 Semiconductor physics, quantum electronics & optoelectronics
      А  - 2019  /      Випуск (2019,  Vol. 22, № 2) 
 Hreshchuk O. M., Yukhymchuk V. O., Dzhagan V. M., Danko V. A., Min'ko V. I., Indutnyi I. Z., Shepeliavyi P. Ye., Lytvyn P. M., Sheregii E., Prokhorenko S.Efficient SERS substrates based on laterally ordered gold nanostructures made using interference lithography
 
 
 Cite:Hreshchuk, O. M., Yukhymchuk, V. O., Dzhagan, V. M., Danko, V. A., Minko, V. I., Indutnyi, I. Z., Shepeliavyi, P. Ye., Lytvyn, P. M., Sheregii, E., Prokhorenko, S. (2019). Efficient SERS substrates based on laterally ordered gold nanostructures made using interference lithography. Semiconductor Physics, Quantum Electronics and Optoelectronics , 22 (2), 215-223. http://jnas.nbuv.gov.ua/article/UJRN-0001073626
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