Features of structural changes in mosaic Ge:Sb according to X-ray diffractometry and electron backscatter diffraction data / Borcha M. D., Solodkyi M. S., Balovsyak S. V., Tkach V. M., Hutsuliak I. I., Kuzmin A. R., Tkach O. O., Kladko V. P., Gudymenko O. Yo., Liubchenko O. I. (2019)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0001073935 Semiconductor physics, quantum electronics & optoelectronics А - 2019 / Випуск (2019, Vol. 22, № 4)
Borcha M. D., Solodkyi M. S., Balovsyak S. V., Tkach V. M., Hutsuliak I. I., Kuzmin A. R., Tkach O. O., Kladko V. P., Gudymenko O. Yo., Liubchenko O. I. Features of structural changes in mosaic Ge:Sb according to X-ray diffractometry and electron backscatter diffraction data
Cite: Borcha, M. D., Solodkyi, M. S., Balovsyak, S. V., Tkach, V. M., Hutsuliak, I. I., Kuzmin, A. R., Tkach, O. O., Kladko, V. P., Gudymenko, O. Yo., Liubchenko, O. I. (2019). Features of structural changes in mosaic Ge:Sb according to X-ray diffractometry and electron backscatter diffraction data. Semiconductor Physics, Quantum Electronics and Optoelectronics , 22 (4), 381-386. http://jnas.nbuv.gov.ua/article/UJRN-0001073935 |
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