The features of temperature dependence of contact resistivity of Au Ti Pd2Si p+-Si ohmic contacts / Belyaev, A. E., Boltovets, N. S., Kapitanchuk, L. M., Konakova, R. V., Kladko, V. P., Kudryk, Ya. Ya., Kuchuk, A. V., Lytvyn, O. S., Milenin, V. V., Korostinskaya, T. V., Ataubaeva, A. B., Nevolin, P. V. (2010)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000349117
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2010, Vol. 13, № 1)
Belyaev A. E., Boltovets N. S., Kapitanchuk L. M., Konakova R. V., Kladko V. P., Kudryk Ya. Ya., Kuchuk A. V., Lytvyn O. S., Milenin V. V., Korostinskaya T. V., Ataubaeva A. B., Nevolin P. V.
The features of temperature dependence of contact resistivity of Au Ti Pd2Si p+-Si ohmic contacts
Cite:
Belyaev, A. E., Boltovets, N. S., Kapitanchuk, L. M., Konakova, R. V., Kladko, V. P., Kudryk, Ya. Ya., Kuchuk, A. V., Lytvyn, O. S., Milenin, V. V., Korostinskaya, T. V., Ataubaeva, A. B., Nevolin, P. V. (2010). The features of temperature dependence of contact resistivity of Au Ti Pd2Si p+-Si ohmic contacts. Semiconductor Physics, Quantum Electronics and Optoelectronics , 13 (1), 8-11. http://jnas.nbuv.gov.ua/article/UJRN-0000349117 | |
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