The features of temperature dependence of contact resistivity of Au Ti Pd2Si p+-Si ohmic contacts / Belyaev A. E., Boltovets N. S., Kapitanchuk L. M., Konakova R. V., Kladko V. P., Kudryk Ya. Ya., Kuchuk A. V., Lytvyn O. S., Milenin V. V., Korostinskaya T. V., Ataubaeva A. B., Nevolin P. V. (2010)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000349117
Semiconductor physics, quantum electronics & optoelectronics    А - 2019 /  Випуск (2010, Vol. 13, № 1)
Belyaev A. E., Boltovets N. S., Kapitanchuk L. M., Konakova R. V., Kladko V. P., Kudryk Ya. Ya., Kuchuk A. V., Lytvyn O. S., Milenin V. V., Korostinskaya T. V., Ataubaeva A. B., Nevolin P. V.
The features of temperature dependence of contact resistivity of Au Ti Pd2Si p+-Si ohmic contacts
Cite:
Belyaev, A. E., Boltovets, N. S., Kapitanchuk, L. M., Konakova, R. V., Kladko, V. P., Kudryk, Ya. Ya., Kuchuk, A. V., Lytvyn, O. S., Milenin, V. V., Korostinskaya, T. V., Ataubaeva, A. B., Nevolin, P. V. (2010). The features of temperature dependence of contact resistivity of Au Ti Pd2Si p+-Si ohmic contacts. Semiconductor Physics, Quantum Electronics and Optoelectronics , 13 (1), 8-11. http://jnas.nbuv.gov.ua/article/UJRN-0000349117 | |
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