Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2 / Bunak, S. V., Buyanin, A. A., Ilchenko, V. V., Marin, V. V., Melnik, V. P., Khacevich, I. M., Tretyak, O. V., Shkavro, A. G. (2010)


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