Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2 / Bunak, S. V., Buyanin, A. A., Ilchenko, V. V., Marin, V. V., Melnik, V. P., Khacevich, I. M., Tretyak, O. V., Shkavro, A. G. (2010)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000349118
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2010, Vol. 13, № 1)
Bunak S. V., Buyanin A. A., Ilchenko V. V., Marin V. V., Melnik V. P., Khacevich I. M., Tretyak O. V., Shkavro A. G.
Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2
Cite:
Bunak, S. V., Buyanin, A. A., Ilchenko, V. V., Marin, V. V., Melnik, V. P., Khacevich, I. M., Tretyak, O. V., Shkavro, A. G. (2010). Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2. Semiconductor Physics, Quantum Electronics and Optoelectronics , 13 (1), 12-18. http://jnas.nbuv.gov.ua/article/UJRN-0000349118 | |
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