Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2 / Bunak S. V., Buyanin A. A., Ilchenko V. V., Marin V. V., Melnik V. P., Khacevich I. M., Tretyak O. V., Shkavro A. G. (2010)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000349118
Semiconductor physics, quantum electronics & optoelectronics    А - 2019 /  Випуск (2010, Vol. 13, № 1)
Bunak S. V., Buyanin A. A., Ilchenko V. V., Marin V. V., Melnik V. P., Khacevich I. M., Tretyak O. V., Shkavro A. G.
Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2
Cite:
Bunak, S. V., Buyanin, A. A., Ilchenko, V. V., Marin, V. V., Melnik, V. P., Khacevich, I. M., Tretyak, O. V., Shkavro, A. G. (2010). Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2. Semiconductor Physics, Quantum Electronics and Optoelectronics , 13 (1), 12-18. http://jnas.nbuv.gov.ua/article/UJRN-0000349118 | |
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