Silicon carbide defects and luminescence centers in current heated 6H-SiC / Lee, S. W., Vlaskina, S. I., Vlaskin, V. I., Zaharchenko, I. V., Gubanov, V. A., Mishinova, G. N., Svechnikov, G. S., Rodionov, V. E., Podlasov, S. A. (2010)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000349120
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2010, Vol. 13, № 1)
Lee S. W., Vlaskina S. I., Vlaskin V. I., Zaharchenko I. V., Gubanov V. A., Mishinova G. N., Svechnikov G. S., Rodionov V. E., Podlasov S. A.
Silicon carbide defects and luminescence centers in current heated 6H-SiC
Cite:
Lee, S. W., Vlaskina, S. I., Vlaskin, V. I., Zaharchenko, I. V., Gubanov, V. A., Mishinova, G. N., Svechnikov, G. S., Rodionov, V. E., Podlasov, S. A. (2010). Silicon carbide defects and luminescence centers in current heated 6H-SiC. Semiconductor Physics, Quantum Electronics and Optoelectronics , 13 (1), 24-29. http://jnas.nbuv.gov.ua/article/UJRN-0000349120 | |
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