Silicon carbide defects and luminescence centers in current heated 6H-SiC / Lee S. W., Vlaskina S. I., Vlaskin V. I., Zaharchenko I. V., Gubanov V. A., Mishinova G. N., Svechnikov G. S., Rodionov V. E., Podlasov S. A. (2010)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000349120
Semiconductor physics, quantum electronics & optoelectronics    А - 2019 /  Випуск (2010, Vol. 13, № 1)
Lee S. W., Vlaskina S. I., Vlaskin V. I., Zaharchenko I. V., Gubanov V. A., Mishinova G. N., Svechnikov G. S., Rodionov V. E., Podlasov S. A.
Silicon carbide defects and luminescence centers in current heated 6H-SiC
Cite:
Lee, S. W., Vlaskina, S. I., Vlaskin, V. I., Zaharchenko, I. V., Gubanov, V. A., Mishinova, G. N., Svechnikov, G. S., Rodionov, V. E., Podlasov, S. A. (2010). Silicon carbide defects and luminescence centers in current heated 6H-SiC. Semiconductor Physics, Quantum Electronics and Optoelectronics , 13 (1), 24-29. http://jnas.nbuv.gov.ua/article/UJRN-0000349120 | |
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