Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field / Trachevsky, V. V., Steblenko, L. P., Demchenko, P. Y., Koplak, O. V., Kuryliuk, A. M., Melnik, A. K. (2010)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000349132
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2010, Vol. 13, № 1)
Trachevsky V. V., Steblenko L. P., Demchenko P. Y., Koplak O. V., Kuryliuk A. M., Melnik A. K.
Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field
Cite:
Trachevsky, V. V., Steblenko, L. P., Demchenko, P. Y., Koplak, O. V., Kuryliuk, A. M., Melnik, A. K. (2010). Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field. Semiconductor Physics, Quantum Electronics and Optoelectronics , 13 (1), 87-90. http://jnas.nbuv.gov.ua/article/UJRN-0000349132 | |
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