Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity / Boltovets, M. S., Ivanov, V. M., Konakova, R. V., Kudryk, Ya. Ya., Milenin, V. V., Shynkarenko, V. V., Sheremet, V. M., Sveshnikov, Yu. N., Yavich, B. S. (2010)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000349371
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2010, Vol. 13, № 4)
Boltovets M. S., Ivanov V. M., Konakova R. V., Kudryk Ya. Ya., Milenin V. V., Shynkarenko V. V., Sheremet V. M., Sveshnikov Yu. N., Yavich B. S.
Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity
Cite:
Boltovets, M. S., Ivanov, V. M., Konakova, R. V., Kudryk, Ya. Ya., Milenin, V. V., Shynkarenko, V. V., Sheremet, V. M., Sveshnikov, Yu. N., Yavich, B. S. (2010). Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity. Semiconductor Physics, Quantum Electronics and Optoelectronics , 13 (4), 337-342. http://jnas.nbuv.gov.ua/article/UJRN-0000349371 | |
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