Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity / Boltovets M. S., Ivanov V. M., Konakova R. V., Kudryk Ya. Ya., Milenin V. V., Shynkarenko V. V., Sheremet V. M., Sveshnikov Yu. N., Yavich B. S. (2010)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000349371
Semiconductor physics, quantum electronics & optoelectronics    А - 2019 /  Випуск (2010, Vol. 13, № 4)
Boltovets M. S., Ivanov V. M., Konakova R. V., Kudryk Ya. Ya., Milenin V. V., Shynkarenko V. V., Sheremet V. M., Sveshnikov Yu. N., Yavich B. S.
Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity
Cite:
Boltovets, M. S., Ivanov, V. M., Konakova, R. V., Kudryk, Ya. Ya., Milenin, V. V., Shynkarenko, V. V., Sheremet, V. M., Sveshnikov, Yu. N., Yavich, B. S. (2010). Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity. Semiconductor Physics, Quantum Electronics and Optoelectronics , 13 (4), 337-342. http://jnas.nbuv.gov.ua/article/UJRN-0000349371 | |
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