Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor / Vlasov, S. I., Saparov, F. A., Ismailov, K. A. (2010)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000349376
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2010, Vol. 13, № 4)
Vlasov S. I., Saparov F. A., Ismailov K. A.
Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor
Cite:
Vlasov, S. I., Saparov, F. A., Ismailov, K. A. (2010). Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor. Semiconductor Physics, Quantum Electronics and Optoelectronics , 13 (4), 363-365. http://jnas.nbuv.gov.ua/article/UJRN-0000349376 | |
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