X-ray study of dopant state in highly doped semiconductor single crystals / Shulpina, I. L., Kyutt, R. N., Ratnikov, V. V., Prokhorov, I. A., Bezbakh, I. Zh., Shcheglov, M. P. (2011)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000349431
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2011, Vol. 14, № 1)
Shul'pina I. L., Kyutt R. N., Ratnikov V. V., Prokhorov I. A., Bezbakh I. Zh., Shcheglov M. P.
X-ray study of dopant state in highly doped semiconductor single crystals
Cite:
Shulpina, I. L., Kyutt, R. N., Ratnikov, V. V., Prokhorov, I. A., Bezbakh, I. Zh., Shcheglov, M. P. (2011). X-ray study of dopant state in highly doped semiconductor single crystals. Semiconductor Physics, Quantum Electronics and Optoelectronics , 14 (1), 62-70. http://jnas.nbuv.gov.ua/article/UJRN-0000349431 | |
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