Negative magnetoresistance of heavily doped silicon p-n junction / Borblik, V. L., Rudnev, I. A., Shwarts, Yu. M., Shwarts, M. M. (2011)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000349435
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2011, Vol. 14, № 1)
Borblik V. L., Rudnev I. A., Shwarts Yu. M., Shwarts M. M.
Negative magnetoresistance of heavily doped silicon p-n junction
Cite:
Borblik, V. L., Rudnev, I. A., Shwarts, Yu. M., Shwarts, M. M. (2011). Negative magnetoresistance of heavily doped silicon p-n junction. Semiconductor Physics, Quantum Electronics and Optoelectronics , 14 (1), 88-90. http://jnas.nbuv.gov.ua/article/UJRN-0000349435 | |
|
|
PDF