Structural properties of nanocomposite SiO2(Si) films obtained by ion-plasma sputtering and thermal annealing / Bratus, O. L., Evtukh, A. A., Lytvyn, O. S., Voitovych, M. V., Yukhymchuk, V. O. (2011)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000349503
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2011, Vol. 14, № 2)
Bratus' O. L., Evtukh A. A., Lytvyn O. S., Voitovych M. V., Yukhymchuk V. O.
Structural properties of nanocomposite SiO2(Si) films obtained by ion-plasma sputtering and thermal annealing
Cite:
Bratus, O. L., Evtukh, A. A., Lytvyn, O. S., Voitovych, M. V., Yukhymchuk, V. O. (2011). Structural properties of nanocomposite SiO2(Si) films obtained by ion-plasma sputtering and thermal annealing. Semiconductor Physics, Quantum Electronics and Optoelectronics , 14 (2), 247-255. http://jnas.nbuv.gov.ua/article/UJRN-0000349503 | |
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