Semiconductor physics, quantum electronics & optoelectronics. 2011, 14 (2) АРХІВ (Всі випуски) 
 | Semiconductor physics, quantum electronics & optoelectronics
2011. Вип. 2 |
- Title.
- Content.
- Tripathy P. R., Mukherjee M., Pati S. P. Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency. - C. 137-144.
- lgomati H. A., Ahmad I., Salehuddin F., Hamid F. A., Zaharim A., Majlis B. Y., Apte P. R. Optimal solution in producing 32nm CMOS technology transistor with desired leakage current. - C. 145-151.
- Sharma J., Kumar S. Role of Sb additive in the dielectric properties of Se90In10 and Se75In25 glassy alloys. - C. 152-156.
- Ivashchenko M. M., Opanasyuk A. S., Opanasyuk N. M., Danilchenko S. M., Starikov V. V. Structural and optical characteristics of ZnSe and CdSe films condensed on non-oriented substrates. - C. 157-163.
- Kovalyuk Z. D., Khandozhko A. G., Lastivka G. I., Samila A. P. The electric field gradient asymmetry parameter in InSe. - C. 164-166.
- Burbelo R., Isaiev M., Kuzmich A. Photo-thermo-acoustic analysis of heterogeneous semiconductor structures under pulse laser irradiation. - C. 167-169.
- Bochkova T. M., Plyaka S. N. Charge transport in bismuth orthogermanate crystals. - C. 170-174.
- Severin V. S. Influence of polarization of free-electron system in semiconductor on the position of minimum in plasma light reflection. - C. 175-178.
- Javidi S., Enayati R., Iraj M., Aliakbari N. Influence of Ca2+ ions on the habit of KDP crystals. - C. 179-182.
- Boiko I. I. Influence of electron-electron drag on piezoresistance of n-Si. - C. 183-187.
- Balanetska V. O., Marchuk Yu., Karachevtsev A. V., Ushenko V. O. Singular analysis of Jones-matrix images describing polycrystalline networks of biological crystals in diagnostics of cholelithiasis in its latent period. - C. 188-194.
- Dvoynenko M. M., Kazantseva Z. I., Strelchuk V. V., Kolomys O. F., Bortshagovsky E. G., Venger E. F. Probing plasmonic system by the simultaneous measurement of Raman and fluorescence signals of dye molecules. - C. 195-199.
- Pavlovich I. I., Tomashik Z. F., Stratiychuk I. B., Tomashik V. M., SavchukO. A., Kravtsova A. S. Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO3-HCl solutions. - C. 200-202.
- Rana A. K., Chand N., Kapoor V. Impact of sidewall spacer on gate leakage behavior of nano-scale MOSFETs. - C. 203-208.
- Boltovets P. M. Effect of microwave radiation on optical characteristics of thin gold films. - C. 209-212.
- Gaidar G. P., Dolgolenko A. P., Litovchenko P. G. The kinetic of point defect transformation during the annealing process in electron-irradiated silicon. - C. 213-221.
- Bushma A. V. Information processing in an optoelectronic display system. - C. 222-227.
- Zabolotna N. I., Balanetska V. O., Telenga O. Yu., Ushenko V. O. Wavelet analysis of Jones-matrix images corresponding to polycrystalline networks of biological crystals in diagnostics of tuberculosis. - C. 228-236.
- Akinlami J. O., Awobode A. M. Photoemission study of the electronic structure of praseodymium filled skutterudite PrOs4Sb12). - C. 237-240.
- Bunak S. V., Ilchenko V. V., Melnik V. P., Hatsevych I. M., Romanyuk B. N., Shkavro A. G., Tretyak O. V. Electrical properties of MIS structures with silicon nanoclusters. - C. 241-246.
- Bratus' O. L., Evtukh A. A., Lytvyn O. S., Voitovych M. V., Yukhymchuk V. О. Structural properties of nanocomposite SiO2(Si) films obtained by ion-plasma sputtering and thermal annealing. - C. 247-255.
- Vovk V. E., Kovalchuk O. V., Gorishnyj M. P., Kovalchuk T. M. Dielectric and electro-optical properties of solutions of chemically modified fullerene С60 in nematic liquid crystal. - C. 256-260.
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