Anti-reflection coatings based on SnO2, SiO2, Si3N4 films for photodiodes operating in ultraviolet and visible spectral ranges / Dobrovolskiy, Yu. G., Perevertailo, V. L., Shabashkevich, B. G. (2011)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000349740
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2011, Vol. 14, № 3)
Dobrovolskiy Yu. G., Perevertailo V. L., Shabashkevich B. G.
Anti-reflection coatings based on SnO2, SiO2, Si3N4 films for photodiodes operating in ultraviolet and visible spectral ranges
Cite:
Dobrovolskiy, Yu. G., Perevertailo, V. L., Shabashkevich, B. G. (2011). Anti-reflection coatings based on SnO2, SiO2, Si3N4 films for photodiodes operating in ultraviolet and visible spectral ranges. Semiconductor Physics, Quantum Electronics and Optoelectronics , 14 (3), 298-301. http://jnas.nbuv.gov.ua/article/UJRN-0000349740 | |
|
|
PDF