Semiconductor physics, quantum electronics & optoelectronics. 2011, 14 (3) АРХІВ (Всі випуски) 
 | Semiconductor physics, quantum electronics & optoelectronics
2011. Вип. 3 |
- Title.
- Content.
- Lashkarev G. V., Sichkovskyi V. I., Radchenko M. V., Aleshkevych P., Dmitriev O. I., Butorin P. E., Kovalyuk Z. D., Szymczak R., Slawska-Waniewska A., Nedelko N., Yakiela R., Balagurov A. M., Beskrovnyy A. I., Dobrowolski W. Diluted magnetic layered semiconductor InSe:Mn with high Curie temperature. - C. 263-268.
- Oberemok O. S., Litovchenko V. G., Gamov D. V., Popov V. G., Melnik V. P, Gudymenko O. Yo., Nikirin V. A., Khatsevich І. M. Formation of silicon nanoclusters in buried ultra-thin oxide layers. - C. 269-272.
- Sopinskyy M. V., Indutnyi I. Z., Michailovska K. V., Shepeliavy P. E., Tkach V. M. Polarization conversion effect in obliquely deposited SiOx films. - C. 273-278.
- Studenyak I. P., Izai V. Yu., Stephanovich V. О., Panko V. V., Kus P., Plecenik A., Zahoran M., Gregus J., Roch T. Optical absorption edge and luminescence in phosphorous-implanted Cu6PS5X (X = I, Br) single crystals. - C. 287-293.
- Gaidar G. P. Changes in Hall parameters after -irradiation (60Со) of n-Ge. - C. 294-297.
- Dobrovolskiy Yu. G., Perevertailo V. L., Shabashkevich B. G. Anti-reflection coatings based on SnO2, SiO2, Si3N4 films for photodiodes operating in ultraviolet and visible spectral ranges. - C. 298-301.
- Amer H. H., Elkordy M., Zien M., Dahshan A., Elshamy R. A. Characterization of quaternary chalcogenide As-Ge-Te-Si thin films. - C. 302-307.
- Khrypunov G., Meriuts A., Shelest T., Deineko N., Klyui N., Avksentyeva L., Gorbulik V. The role of copper in bifacial CdTe based solar cells. - C. 308-312.
- Kostyukevych K. V., Khristosenko R. V., Shirshov Yu. M., Kostyukevych S. A., Samoylov A. V., Kalchenko V. I. Multi-element gas sensor based on surface plasmon resonance: recognition of alcohols by using calixarene films. - C. 313-320.
- Kovalchuk O. V. Method and estimation of parameters of dense part of electrical double layer at the interface electrode-solution of the dye in liquid crystal. - C. 321-324.
- Dolgov L., Kravchuk R., Rybak A., Kiisk V., Sildos I., Blonskyi I. Optical properties of the Ti surface structured by femtosecond laser beam. - C. 325-329.
- Kozubovsky V. R., Kormosh V. V., Alyakshev I. P., Lishchenko N. H. Sensors for fire gas detectors. - C. 330-333.
- Steblenko L. P., Koplak O. V., Syvorotka I. I., Kravchenko V. S. Effect of magnetic field on the reconstruction of the defect-impurity state and сathodoluminescence in Si/SiO2 structure. - C. 334-338.
- Vlasenko N. A., Oleksenko P. F., Mukhlyo M. O., Lytvyn P. M., Veligura L. I., Denisova Z. L. Laser oscillation in Cr2+:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism. - C. 339-343.
- Freik D. M., Yurchyshyn I. K., Potyak V. Yu., Lysiuk Yu. V. Size effects in p-PbTe nanostructures on polyamide. - C. 344-349.
- Kostyukevych S. O., Muravsky L. I., Fitio V. M., Voronyak T. I., Shepeliavyi P. E., Kostyukevych K. V., Moskalenko N. L., Pogoda V. I. The new approach to identification of film reflecting holographic marks. - C. 350-357.
- Boiko I. I. Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium. - C. 357-361.
- Taghiyev T. B. Photoconductivity and photoluminescence features of y-irradiated GaS0. 75Se0. 25 single crystals. - C. 362-364.
- Ushenko Yu. O., Balanetska V. O., Angelsky O. P. Jones-matrix images corresponding to networks of biological crystals for diagnostics and classification of their optical properties. - C. 365-374.
- Gudenko Yu. M., Vainberg V. V., Poroshin V. M., Tulupenko V. M. Lateral drift of photo-generated charge carriers in the p-SiGe/Si heterostructures with quantum wells. - C. 375-379.
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