Lateral drift of photo-generated charge carriers in the p-SiGe/Si heterostructures with quantum wells / Gudenko, Yu. M., Vainberg, V. V., Poroshin, V. M., Tulupenko, V. M. (2011)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000349754
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2011, Vol. 14, № 3)
Gudenko Yu. M., Vainberg V. V., Poroshin V. M., Tulupenko V. M.
Lateral drift of photo-generated charge carriers in the p-SiGe/Si heterostructures with quantum wells
Cite:
Gudenko, Yu. M., Vainberg, V. V., Poroshin, V. M., Tulupenko, V. M. (2011). Lateral drift of photo-generated charge carriers in the p-SiGe/Si heterostructures with quantum wells. Semiconductor Physics, Quantum Electronics and Optoelectronics , 14 (3), 375-379. http://jnas.nbuv.gov.ua/article/UJRN-0000349754 | |
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