Effect of pressure on the properties of Al SiO2 n-Si Ni structures / Vlasov, S. I., Ovsyannikov, A. V., Ismailov, B. K., Kuchkarov, B. H. (2012)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000350135
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2012, Vol. 15, № 2)
Vlasov S. I., Ovsyannikov A. V., Ismailov B. K., Kuchkarov B. H.
Effect of pressure on the properties of Al SiO2 n-Si Ni structures
Cite:
Vlasov, S. I., Ovsyannikov, A. V., Ismailov, B. K., Kuchkarov, B. H. (2012). Effect of pressure on the properties of Al SiO2 n-Si Ni structures. Semiconductor Physics, Quantum Electronics and Optoelectronics , 15 (2), 166-169. http://jnas.nbuv.gov.ua/article/UJRN-0000350135 | |
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