Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe / Kovalyuk, Z. D., Duplavyy, V. Y., Sydor, O. M. (2012)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000350285
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2012, Vol. 15, № 1)
Kovalyuk Z. D., Duplavyy V. Y., Sydor O. M.
Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe
Cite:
Kovalyuk, Z. D., Duplavyy, V. Y., Sydor, O. M. (2012). Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe. Semiconductor Physics, Quantum Electronics and Optoelectronics , 15 (1), 38-40. http://jnas.nbuv.gov.ua/article/UJRN-0000350285 | |
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