A novel Al0. 33Ga0. 67As/In0. 15Ga0. 85As/GaAs quantum well Hall device grown on (111) GaAs) / Sghaier, H., Bouzaiene, L., Sfaxi, L., Maaref, H. (2012)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000350292
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2012, Vol. 15, № 1)
Sghaier H., Bouzaiene L., Sfaxi L., Maaref H.
A novel Al0. 33Ga0. 67As/In0. 15Ga0. 85As/GaAs quantum well Hall device grown on (111) GaAs)
Cite:
Sghaier, H., Bouzaiene, L., Sfaxi, L., Maaref, H. (2012). A novel Al0. 33Ga0. 67As/In0. 15Ga0. 85As/GaAs quantum well Hall device grown on (111) GaAs). Semiconductor Physics, Quantum Electronics and Optoelectronics , 15 (1), 72-76. http://jnas.nbuv.gov.ua/article/UJRN-0000350292 | |
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