Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates / Makhniy, V. P., Slyotov, M. M., Tkachenko, I. V., Slyotov, A. M. (2012)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000350387
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2012, Vol. 15, № 4)
Makhniy V. P., Slyotov М. М., Tkachenko I. V., Slyotov А. М.
Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates
Cite:
Makhniy, V. P., Slyotov, M. M., Tkachenko, I. V., Slyotov, A. M. (2012). Properties of CdSe heterolayers obtained by isovalent substitution on CdTe substrates. Semiconductor Physics, Quantum Electronics and Optoelectronics , 15 (4), 338-339. http://jnas.nbuv.gov.ua/article/UJRN-0000350387 | |
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