Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density / Sachenko, A. V., Belyaev, A. E., Boltovets, N. S., Zhilyaev, Yu. V., Kapitanchuk, L. M., Kladko, V. P., Konakova, R. V., Kudryk, Ya. Ya., Kuchuk, A. V., Naumov, A. V., Panteleev, V. V., Sheremet, V. N. (2012)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000350390
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2012, Vol. 15, № 4)
Sachenko A. V., Belyaev A. E., Boltovets N. S., Zhilyaev Yu. V., Kapitanchuk L. M., Klad'ko V. P., Konakova R. V., Kudryk Ya. Ya., Kuchuk A. V., Naumov A. V., Panteleev V. V., Sheremet V. N.
Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density
Cite:
Sachenko, A. V., Belyaev, A. E., Boltovets, N. S., Zhilyaev, Yu. V., Kapitanchuk, L. M., Kladko, V. P., Konakova, R. V., Kudryk, Ya. Ya., Kuchuk, A. V., Naumov, A. V., Panteleev, V. V., Sheremet, V. N. (2012). Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density. Semiconductor Physics, Quantum Electronics and Optoelectronics , 15 (4), 351-357. http://jnas.nbuv.gov.ua/article/UJRN-0000350390 | |
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