Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density / Sachenko A. V., Belyaev A. E., Boltovets N. S., Zhilyaev Yu. V., Kapitanchuk L. M., Klad'ko V. P., Konakova R. V., Kudryk Ya. Ya., Kuchuk A. V., Naumov A. V., Panteleev V. V., Sheremet V. N. (2012)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000350390
Semiconductor physics, quantum electronics & optoelectronics    А - 2019 /  Випуск (2012, Vol. 15, № 4)
Sachenko A. V., Belyaev A. E., Boltovets N. S., Zhilyaev Yu. V., Kapitanchuk L. M., Klad'ko V. P., Konakova R. V., Kudryk Ya. Ya., Kuchuk A. V., Naumov A. V., Panteleev V. V., Sheremet V. N.
Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density
Cite:
Sachenko, A. V., Belyaev, A. E., Boltovets, N. S., Zhilyaev, Yu. V., Kapitanchuk, L. M., Kladko, V. P., Konakova, R. V., Kudryk, Ya. Ya., Kuchuk, A. V., Naumov, A. V., Panteleev, V. V., Sheremet, V. N. (2012). Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density. Semiconductor Physics, Quantum Electronics and Optoelectronics , 15 (4), 351-357. http://jnas.nbuv.gov.ua/article/UJRN-0000350390 | |
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