Laser-induced incandescence of silicon surface under 1064-nm excitation / Kopyshinsky, A. V., Zelensky, S. E., Gomon, E. A., Rozouvan, S. G., Kolesnik, A. S. (2012)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000350395
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2012, Vol. 15, № 4)
Kopyshinsky A. V., Zelensky S. E., Gomon E. A., Rozouvan S. G., Kolesnik A. S.
Laser-induced incandescence of silicon surface under 1064-nm excitation
Cite:
Kopyshinsky, A. V., Zelensky, S. E., Gomon, E. A., Rozouvan, S. G., Kolesnik, A. S. (2012). Laser-induced incandescence of silicon surface under 1064-nm excitation. Semiconductor Physics, Quantum Electronics and Optoelectronics , 15 (4), 376-381. http://jnas.nbuv.gov.ua/article/UJRN-0000350395 | |
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