Role of dislocations in formation of ohmic contacts to heavily doped n-Si / Belyaev, A. E., Pilipenko, V. A., Anischik, V. M., Petlitskaya, T. V., Sachenko, A. V., Kladko, V. P., Konakova, R. V., Boltovets, N. S., Korostinskaya, T. V., Kapitanchuk, L. M. (2013)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000351875
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2013, Vol. 16, № 2)
Belyaev A. E., Pilipenko V. A., Anischik V. M., Petlitskaya T. V., Sachenko A. V., Klad'ko V. P., Konakova R. V., Boltovets N. S., Korostinskaya T. V., Kapitanchuk L. M.
Role of dislocations in formation of ohmic contacts to heavily doped n-Si
Cite:
Belyaev, A. E., Pilipenko, V. A., Anischik, V. M., Petlitskaya, T. V., Sachenko, A. V., Kladko, V. P., Konakova, R. V., Boltovets, N. S., Korostinskaya, T. V., Kapitanchuk, L. M. (2013). Role of dislocations in formation of ohmic contacts to heavily doped n-Si. Semiconductor Physics, Quantum Electronics and Optoelectronics , 16 (2), 99-110. http://jnas.nbuv.gov.ua/article/UJRN-0000351875 | |
|
|
PDF