Role of dislocations in formation of ohmic contacts to heavily doped n-Si / Belyaev A. E., Pilipenko V. A., Anischik V. M., Petlitskaya T. V., Sachenko A. V., Klad'ko V. P., Konakova R. V., Boltovets N. S., Korostinskaya T. V., Kapitanchuk L. M. (2013)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000351875
Semiconductor physics, quantum electronics & optoelectronics    А - 2019 /  Випуск (2013, Vol. 16, № 2)
Belyaev A. E., Pilipenko V. A., Anischik V. M., Petlitskaya T. V., Sachenko A. V., Klad'ko V. P., Konakova R. V., Boltovets N. S., Korostinskaya T. V., Kapitanchuk L. M.
Role of dislocations in formation of ohmic contacts to heavily doped n-Si
Cite:
Belyaev, A. E., Pilipenko, V. A., Anischik, V. M., Petlitskaya, T. V., Sachenko, A. V., Kladko, V. P., Konakova, R. V., Boltovets, N. S., Korostinskaya, T. V., Kapitanchuk, L. M. (2013). Role of dislocations in formation of ohmic contacts to heavily doped n-Si. Semiconductor Physics, Quantum Electronics and Optoelectronics , 16 (2), 99-110. http://jnas.nbuv.gov.ua/article/UJRN-0000351875 | |
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