Silicon carbide phase transition in as-grown 3C-6H polytypes junction / Vlaskina, S. I., Mishinova, G. N., Vlaskin, V. I., Svechnikov, G. S., Rodionov, V. E., Lee, S. W. (2013)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000351880
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2013, Vol. 16, № 2)
Vlaskina S. I., Mishinova G. N., Vlaskin V. I., Svechnikov G. S., Rodionov V. E., Lee S. W.
Silicon carbide phase transition in as-grown 3C-6H polytypes junction
Cite:
Vlaskina, S. I., Mishinova, G. N., Vlaskin, V. I., Svechnikov, G. S., Rodionov, V. E., Lee, S. W. (2013). Silicon carbide phase transition in as-grown 3C-6H polytypes junction. Semiconductor Physics, Quantum Electronics and Optoelectronics , 16 (2), 132-135. http://jnas.nbuv.gov.ua/article/UJRN-0000351880 | |
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