On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step / Sachenko, A. V., Belyaev, A. E., Boltovets, N. S., Vinogradov, A. O., Pilipenko, V. A., Petlitskaya, T. V., Anischik, V. M., Konakova, R. V., Korostinskaya, T. V., Kostylyov, V. P., Kudryk, Ya. Ya., Lyapin, V. G., Romanets, P. N., Sheremet, V. N. (2014)
 
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000352564
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2014, Vol. 17, № 1)
Sachenko A. V., Belyaev A. E., Boltovets N. S., Vinogradov A. O., Pilipenko V. A., Petlitskaya T. V., Anischik V. M., Konakova R. V., Korostinskaya T. V., Kostylyov V. P., Kudryk Ya. Ya., Lyapin V. G., Romanets P. N., Sheremet V. N.
On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step
Cite:
Sachenko, A. V., Belyaev, A. E., Boltovets, N. S., Vinogradov, A. O., Pilipenko, V. A., Petlitskaya, T. V., Anischik, V. M., Konakova, R. V., Korostinskaya, T. V., Kostylyov, V. P., Kudryk, Ya. Ya., Lyapin, V. G., Romanets, P. N., Sheremet, V. N. (2014). On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step. Semiconductor Physics, Quantum Electronics and Optoelectronics , 17 (1), 1-6. http://jnas.nbuv.gov.ua/article/UJRN-0000352564 | |
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