On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step / Sachenko A. V., Belyaev A. E., Boltovets N. S., Vinogradov A. O., Pilipenko V. A., Petlitskaya T. V., Anischik V. M., Konakova R. V., Korostinskaya T. V., Kostylyov V. P., Kudryk Ya. Ya., Lyapin V. G., Romanets P. N., Sheremet V. N. (2014)
 
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000352564
Semiconductor physics, quantum electronics & optoelectronics    А - 2019 /  Випуск (2014, Vol. 17, № 1)
Sachenko A. V., Belyaev A. E., Boltovets N. S., Vinogradov A. O., Pilipenko V. A., Petlitskaya T. V., Anischik V. M., Konakova R. V., Korostinskaya T. V., Kostylyov V. P., Kudryk Ya. Ya., Lyapin V. G., Romanets P. N., Sheremet V. N.
On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step
Cite:
Sachenko, A. V., Belyaev, A. E., Boltovets, N. S., Vinogradov, A. O., Pilipenko, V. A., Petlitskaya, T. V., Anischik, V. M., Konakova, R. V., Korostinskaya, T. V., Kostylyov, V. P., Kudryk, Ya. Ya., Lyapin, V. G., Romanets, P. N., Sheremet, V. N. (2014). On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step. Semiconductor Physics, Quantum Electronics and Optoelectronics , 17 (1), 1-6. http://jnas.nbuv.gov.ua/article/UJRN-0000352564 | |
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