Investigation of the influence of isovalent impurity of silicon and -irradiation (60Co) on electrophysical parameters of n-Ge Sb / Gaidar, G. P. (2014)
UkrainianEnglish

web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000352568
  Semiconductor Physics, Quantum Electronics and Optoelectronics        А - 2019  /     Issue (2014, Vol. 17, № 1)

Gaidar G. P.
Investigation of the influence of isovalent impurity of silicon and -irradiation (60Co) on electrophysical parameters of n-Ge Sb

Cite:
Gaidar, G. P. (2014). Investigation of the influence of isovalent impurity of silicon and -irradiation (60Co) on electrophysical parameters of n-Ge Sb. Semiconductor Physics, Quantum Electronics and Optoelectronics , 17 (1), 25-28. http://jnas.nbuv.gov.ua/article/UJRN-0000352568

 

Institute of Information Technologies of VNLU

+38 (044) 525-36-24
libnas@nbuv.gov.ua
Ukraine, 03039, Kyiv, Holosiivskyi Ave, 3, room 209