Electroluminescent properties of Tb-doped carbon-enriched silicon oxide / Tiagulskyi, S. I., Nazarov, A. N., Gordienko, S. O., Vasin, A. V., Rusavsky, A. V., Nazarova, T. M., Gomeniuk, Yu. V., Lysenko, V. S., Rebohle, L., Voelskow, M., Skorupa, W., Koshka, Y. (2014)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000352570
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2014, Vol. 17, № 1)
Tiagulskyi S. I., Nazarov A. N., Gordienko S. O., Vasin A. V., Rusavsky A. V., Nazarova T. M., Gomeniuk Yu. V., Lysenko V. S., Rebohle L., Voelskow M., Skorupa W., Koshka Y.
Electroluminescent properties of Tb-doped carbon-enriched silicon oxide
Cite:
Tiagulskyi, S. I., Nazarov, A. N., Gordienko, S. O., Vasin, A. V., Rusavsky, A. V., Nazarova, T. M., Gomeniuk, Yu. V., Lysenko, V. S., Rebohle, L., Voelskow, M., Skorupa, W., Koshka, Y. (2014). Electroluminescent properties of Tb-doped carbon-enriched silicon oxide. Semiconductor Physics, Quantum Electronics and Optoelectronics , 17 (1), 34-40. http://jnas.nbuv.gov.ua/article/UJRN-0000352570 | |
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