Nanostructures in lightly doped silicon carbide crystals with polytypic defects / Vlaskina, S. I., Mishinova, G. N., Vlaskin, L. V., Rodionov, V. E., Svechnikov, G. S. (2014)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000352781
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2014, Vol. 17, № 2)
Vlaskina S. I., Mishinova G. N., Vlaskin L. V., Rodionov V. E., Svechnikov G. S.
Nanostructures in lightly doped silicon carbide crystals with polytypic defects
Cite:
Vlaskina, S. I., Mishinova, G. N., Vlaskin, L. V., Rodionov, V. E., Svechnikov, G. S. (2014). Nanostructures in lightly doped silicon carbide crystals with polytypic defects. Semiconductor Physics, Quantum Electronics and Optoelectronics , 17 (2), 155-159. http://jnas.nbuv.gov.ua/article/UJRN-0000352781 | |
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